| 摘要 |
PURPOSE:To form a dense and uniform film on the inside surface of a metallic pipe by using a CVD method by connecting gaseous raw material introducing ports to one end of the pipe, connecting a gas discharge port to the other end and moving a heating means on the outside of the pipe. CONSTITUTION:A flange 2 having gaseous raw material supply pipes 3, 3' is connected to one end of the metallic pipe 1 and a flange 4 provided with the gas discharge port 5 is connected to the other end of the pipe 1. SiCl4 and steam, etc. with N2, etc. as a carrier gas are respectively introduced as the gaseous raw materials through the pipes 3, 3' into the pipe 1. The heater 10 of which the heating part is adjusted to a prescribed temp. is slowly moved along the outside of the pipe 1 from the inlet side toward the outlet side. The SiO2 film is thus successively formed on the inside surface of the pipe 1 from the inlet side toward the outlet side. The pipe is cooled after the film formation and the flanges 2, 4 are removed.
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