METHOD FOR PROCESSING OF SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To obtain the wafer of high accuracy in shape by subjecting the semiconductor crystal produced with the <111> face direction as a crystal growth direction to grinding process and subsequently dividing the semiconductor crystal into thin plates by the plane inclined at 54.7 deg. to the <111> face direction. CONSTITUTION:In the semiconductor crystal 11 produced with the <111> face as a crystal growth direction, the <110> face direction (alpha-plane) 12 of this semiconductor crystal 11 and the <1'1'0> face direction (beta-plane) 13 are ground along the <111> face by a cylindrical grinder. Next, the semiconductor crystal 1 in which the alpha-plane 12 and the beta-plane 13 are ground are sliced into a predetermined thickness by the plane including the <110> axis with an inclined angle of 54.7 deg. to the <111> face and a plurality of thin plates 15 are obtained. The thin plates 15 are set in an autoloader with the flat surface (gamma-plane) contact with a supporting rod and those are bevelled to obtain the wafers 16 of predetermined shape. Accordingly, the wafers can be obtained with high shaping accuracy and high productivity by the simple process easily.