发明名称 COPPER ALLOY LEAD MATERIAL FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve tensile strength, elongation and solderability by using a copper alloy, in which Sn, Mg, P are made to be contained in Cu and an unavoidable impurity, as a lead material. CONSTITUTION:A copper-alloy molten metal in which 0.05-0.5% Sn, 0.02-0.1% P and 0.02-0.15% Mg are made to be contained in Cu and an unavoidable impurity is prepared. The copper-alloy molten metal is changed into an ingot through a semi-continuous casting method, turned into a hot stretching plate through hot rolling, and cooled by water, and the upper and lower surfaces of the hot stretching plate are faced. Cold rolling and age treatment are repeated alternately and executed, and finally a stripe material in 0.25mm thickness is manufactured, and subjected to stress-relief annealing.
申请公布号 JPS61242052(A) 申请公布日期 1986.10.28
申请号 JP19850084228 申请日期 1985.04.19
申请人 MITSUBISHI SHINDO KK 发明人 FUTATSUKA RENSEI;SAKAKIBARA TADAO;CHIBA SHUNICHI;KUWABARA MANPEI;KUMAGAI SEIJI
分类号 H01L23/48;C22C9/00;H01L23/495 主分类号 H01L23/48
代理机构 代理人
主权项
地址