发明名称 DRIVING CIRCUIT FOR MEMORY CELL USING JOSEPHSON EFFECT
摘要 PURPOSE:To obtain a storage circuit using the Josephson effect with large capacity and short access time by inserting an input line of a gate circuit in the (M+1)-th circuit to the 3rd line in the M-th circuit (1<=M<=N). CONSTITUTION:An output line 42, for example, is selected by an address signal out of those output lines of a decoding circuit to flow an output current. Then a drive gate 40 is switched to a voltage state. The total inductance nLs of a drive line 34 is sufficiently large and therefore, the output current starts to flow to a resistance 46 having a low impedance through a junction 43. When the output current value reaches the critical current value of the junction 43, the junction 43 is switched to a voltage state. Thus the output current of the drive gate 40 flows to the line 34 with a time constant of nLs/Rsub with the parallel resistance value of each subgap resistance of a Josephson junction and the junction 43 forming the gate 40 defined as Rsub. While the current flowing through an output line 44 in the form of pulses reaches a gate circuit 41 after a delay taud equal to the time needed for transmission through the line 44. Then the gate 41 is switched to a voltage state and an output current flows to a drive line 35.
申请公布号 JPS61242399(A) 申请公布日期 1986.10.28
申请号 JP19850082517 申请日期 1985.04.19
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 SONE JUNICHI
分类号 G11C11/44;H01L39/22;H03K17/92 主分类号 G11C11/44
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