发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the intrusion of an impurity during a manufacturing process from the inside of an impurity-added insulating film by coating the surface of the impurity-added insulating film with a stopping film to impurity diffusion in a semiconductor device with the impurity-added insulating film. CONSTITUTION:The upper section of one main surface of an silicon substrate 101 is coated with polycrystalline silicon semiconductor films consisting of an impurity-added insulating film 103 and silicon films 108a, 108b. In a semiconductor device having such constitution, an silicon nitride film 106, which is brought into contact with at least impurity-added insulating films 103 in opening sections for electrodes and shaped among the insulating films 103 and the silicon films 108a, 108b, is formed. The silicon nitride film 106 prevents the intrusion of an impurity during a manufacturing process from the inside of the impurity- added insulating film 103. Accordingly, the controllability of element characteristics in the manufacturing process is held, thus stabilizing element characteristics.
申请公布号 JPS61242072(A) 申请公布日期 1986.10.28
申请号 JP19850083908 申请日期 1985.04.19
申请人 NEC CORP 发明人 YORIKANE MASAHARU
分类号 H01L29/73;H01L21/283;H01L21/331;H01L29/40;H01L29/72;H01L29/732 主分类号 H01L29/73
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