| 摘要 |
A process for selective formation of a titanium silicide, TiSi2, layer at high temperatures and low pressures via chemical vapor deposition during semiconductor device manufacturing. At 700 DEG to 1000 DEG C. and 0.5 to 1.5 torr, TiSi2 deposits only on exposed silicon or polysilicon surfaces and not at all on neighboring silicon dioxide. The process provides an excellent means of providing low resistivity interconnects without a mask step or subsequent annealing and removal of unreacted titanium.
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