Apparatus for growing GaAs single crystal by using floating zone

摘要

An apparatus for growing a GaAs single crystal by relying on the floating zone technique in a cylinder charged with a GaAs polycrystal and a GaAs single seed crystal, comprising an As container communicating with the interior of the cylinder to supply an optimum vapor pressure of As into the cylinder under the condition that a continuous temperature variation is established between this As container and the GaAs crystals charged in the cylinder, whereby a GaAs single crystal having little deviation from stoichiometry and having a good crystal perfection is obtained.