| 摘要 |
PURPOSE:To prevent the lowering of yield due to a disconnection at a stepped section in an Al wiring by simultaneously conducting SiO2 etching before ion implantation for forming a source-drain for an NMOS even in a PMOS section without being limited to a MOS section. CONSTITUTION:SiO2 is grown on a poly Si gate 8 through heat treatment. When boron fore shaping source-drain 7 for a PMOS is implanted successively, boron is hardly intruded into the poly Si gate 8, and is projected sufficiently into an Si substrate 1. A gate oxide film on the source-drain is etched in an extent that the oxide film is removed by using an Hf group etching liquid. A PMOS section is masked with a resist 10, and ions are implanted to form NMOS source-drain 11. |
