发明名称 |
Method of plating an interconnect metal onto a metal in VLSI devices |
摘要 |
A method of plating an interconnect or contact metal of higher conductivity than aluminum onto a metal layer in VLSI devices includes depositing a coating of insulator over the metal layer, patterning and etching the insulator coating into a mask of the reverse image of a desired lead pattern and then depositing the interconnect metal onto the exposed metal layer. Following depositing the insulator mask and underlaying metal is selectively removed.
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申请公布号 |
US4619887(A) |
申请公布日期 |
1986.10.28 |
申请号 |
US19850762886 |
申请日期 |
1985.09.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOOPER, ROBERT C.;VERRET, DOUGLAS P.;ROANE, BOBBY A. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):G03C5/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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