Method of forming a dielectric layer on a semiconductor device

摘要

A method for forming a substantially planar inorganic dielectric layer over a predetermined pattern of electrical interconnects comprises the steps of reacting phosphoric acid and a trivalent metallic halide compound with an aliphatic solvent to form a coating fluid. The coating fluid is then spun onto the semiconductor device to form a layer over the electrical interconnect. The resultant device is then baked at a first temperature to drive off the solvent and then baked at a second, higher temperature, in order to promote the glass forming reaction. This process is repeated as required to form a coating layer having a thickness which exhibits levelling characteristics of such high quality that fine topography can be carried out on succeeding layers of metal in order to form additional interconnect layers with precision.