发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve creep strength, low-cycle fatigue strength and corrosion resistance, by using wire material comprising specified single crystal copper alloy as a lead wire for wire bonding. CONSTITUTION:As a lead wire for wire bonding, wire material comprising a single crystal copper alloy, which includes 0.2-1.0vol% of at least one kind of material selected from among the group comprising aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, chromium oxide and beryllium oxide, is used. In order to keep strength at high temperature, it is necessary that the size of a particle is 70nm or less and an interval between the particles is 900nm or less. For this purpose, internal oxidation treatment is carried out within a temperature range of 800-1,050 deg.C for 3-24hr. Thus creep due to the load of tensile stress and the fracture life due to low cycle fatigue are improved to a large extent. The fracture life is increased, and corrosion resistance becomes excellent.
申请公布号 JPS61241961(A) 申请公布日期 1986.10.28
申请号 JP19850082582 申请日期 1985.04.19
申请人 TOSHIBA CORP 发明人 SATO MICHIO;SUZUKI ISAO
分类号 C22C32/00;C22C9/00;H01L21/60;H01L23/49 主分类号 C22C32/00
代理机构 代理人
主权项
地址