| 摘要 |
A signal strength detector comprises first, second and third transistors of the same conductivity type. The emitter electrodes of each transistor are connected together and coupled with one of a pair of dc supply lines. The collector electrodes of the first and second transistors are each coupled with the other of the pair of dc supply lines. The base electrode of the first and second transistors are each coupled via a resistor to the base electrode of the third transistor. The collector electrode of the third transistor is effective to provide a source of output current which is representative of a differential signal level between the base electrodes of the first and second transistors.
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