BONDING PROCESS OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To make putting pressure on a substrate needless by a method wherein material comprising silicon tetrachloride is flame-hydrolyzed by oxyhydrogen flame to deposit the produced glassy ultra fine particles on the surface of sub strate while overall surface is laminated with another substrate to be heated for bonding process. CONSTITUTION:Grooves 3 are formed by etching process on the surface of a semiconductor single crystal substrate 2 conforming to the dimension of semiconductor separating region to be sectioned. The overall surface of etched groove coated with an SiO2 film 2 on the groove formed surface of semiconductor single crystal substrate 1 is jetted with oxyhydrogen flame mainly comprising Sicl4 through the intermediary of a burner 5. Next glassy ultrafine particles 6 are deposited on overall surface by flame hydrolytic reaction to be laminated with another semiconductor substrate 4. When heated in a furnace 7, the volume of particles 6 is reduced down to 1/5-1/10 while the substrates 1 and 4 can be bonded to each other by transparent glassy bulky body 6a with no vacant space at all.