发明名称 |
Process for forming a doped oxide film and composite article |
摘要 |
A process for forming a doped oxide film suitable for doping a semiconductor wafer substrate material and composite article. A silicon tetra-alkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a reactive dopant source to form a soluble metallosiloxane polymer. The metallosiloxane polymer is coated onto a semiconductor wafer substrate material to produce a metallosiloxane-wafer composite article. The composite article is heated to produce an impurity doped semiconductor wafer suitable for electronic applications.
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申请公布号 |
US4619719(A) |
申请公布日期 |
1986.10.28 |
申请号 |
US19860822942 |
申请日期 |
1986.01.27 |
申请人 |
OWENS-ILLINOIS, INC. |
发明人 |
THOMAS, IAN M.;TILLMAN, JAMES J. |
分类号 |
H01L21/225;(IPC1-7):H01L21/385 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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