| 摘要 |
PURPOSE:To contrive the stabilization of the quality of the film formed on a wafer by gas-phase growth by arranging a non-oxidizing gas blower for blowing a non-oxidizing gas downward into the second duct surrounding at a distance to form a non-oxidizing atmosphere region. CONSTITUTION:The first duct 1 and the second duct 2 which surrounds at a distance are provided and a non-oxidizing gas blower 3 is arranged in the periphery of the first duct 1. That blower blows a non-oxidizing gas such as nitrogen gas downward to form a non-oxidizing atmosphere region 3a in the part of a wafer 100. The non-oxidizing gas which was blown is partly adsorbed by the inside first duct 1 and the rest of it is adsorbed by the outside second duct 2 which adsorbs the external atmosphere in addition to the non-oxidizing gas. Accordingly, the insulating film can be formed with the stable film quality and the leakage to the outside can be prevented perfectly, thereby reducing the risk remarkably. |
