| 摘要 |
PURPOSE:To enable to perform a high-temperature heat treatment and to prevent the short-circuit between the lower and upper wirings of the multilayer wiring from generating due to a defect in the interlayer insulating film and so forth by a method wherein the lower wiring layers are formed of silicide films and silicide oxide films are formed on the surfaces of the silicide films. CONSTITUTION:The lower wiring layers 4 of the multilayer wiring layer are formed of silicide films and the surfaces of the silicide films are covered with silicide oxide films 5. If so, the silicide films are high-melting point ones and are silimilar to a silicon film in physical property as well and the resistivity thereof drops by about one digit. By this way, a high-temperature heat treatment becomes possible. Moreover, the short-circuit between the lower wirings 4 are an upper wiring 7 can be prevented by the silicide oxide films. |
