| 摘要 |
PURPOSE:To obtain a multiple-wavelength semiconductor laser having different wavelengths in each region by growing a quantum well layer consisting of an upper flat region, a stepped region and a lower flat region on a substrate with stepped structure in an epitaxial manner and making the layer thickness of the quantum well layer differ with each other. CONSTITUTION:At least a first clad layer 9, a thin-film multilayer region 10 constituted by alternately superposing three layers of more of two kinds or more of compound semiconductor thin-films having two-element groups or three- element groups or more of different compositions having thickness of approximately de Broglie wavelength or less of electrons and holes, and a second clad layer 11 are laminated onto a semi-insulating compound semiconductor substrate 7 having a singe or plural step of stepped structure, and a plurality of semiconductor laser devices having different oscillating wavelengths are formed through one-time epitaxial growth. Accordingly, the film thickness of quantum well layers as ultra-thin films is made different, and the oscillating wavelengths of these quantum well type lasers are made different with each other at every region. |
