| 摘要 |
PURPOSE:To obtain a uniform gallium nitride film by reducing the pressure of an atmosphere exposing a substrate in a gas containing a compound which contains a gallium atom, then by reducing the pressure of the atmosphere exposing in ammonia or hydrazine gas and by irradiating ultraviolet rays each time. CONSTITUTION:A substrate is subjected to the repetition of the first process wherein the substrate is exposed in a gas containing a compound which contains a gallium atom, the second process of reducing the pressure of the atmosphere near the surface of the substrate, the third process of irradiating ultraviolet rays on the surface of the substrate reducing the pressure of the atmosphere, the fourth process of exposing the substrate in a gas containing ammonia or hydrazine, the fifth process of reducing the pressure of the atmosphere near the surface of the substrate and the sixth process of irradiating the ultraviolet rays on the surface of the substrate reducing the pressure of the atmosphere. A gas-state compound which contains the Ga atom and a non-oxidizing gas such as H2 or He are used for the gas containing a compound which contains the Ga atom. A mixture of NH3 or N2H4 and a non-oxidizing gas is used for a gas which contains NH3 or N2H4. This enables to obtain a gallium nitride film which has good film quality and uniform film thickness. |
