| 摘要 |
PURPOSE:To obtain an efficient semiconductor laser array device, which can obtain stable single longitudinal-mode oscillation and has small value of threshold oscillating current, by providing a plurality of stripes in a semiconductor layer, and forming a current narrowing layer, which has stripes that link said plurality of the stripes. CONSTITUTION:An active layer has a double heterostructure, which holds N-type and P-type semiconductor layers. An N-type GaAs layer 8, which is formed in the P-type semiconductor layer, constitutes a current-narrowing layer for injecting current efficiently. When a part between ohmic electrodes 6 and 7 is biased in the forward direction and laser oscillation is performed in the cavities of parallel stripes 10, the light beams generated in the cavities are combined, since stripes 11, which are vertically linked, are also operated as cavities. The light beams are synchronized in phase, and a spot-shaped far field pattern is obtained. The shapes of the cavities are changed in the vertically linked stripes 11. Therefore, the light beams are internally reflected at these positions. The oscillating wavelength is selected by interference effect. Thus, stable single longitudinal-mode oscillation can be obtained. In this way, the value of the threshold oscillating current is small and the efficiency is improved. |
