| 摘要 |
PURPOSE:To prevent generation of a natural oxide film by forming semiconductor layer after implanting an impurity into the surface portion of the region of a substrate in which a diffusion layer is to be formed to make the surface of the region amorphous, and applying annealing treatment, thereby activating the surface portion. CONSTITUTION:A selective oxide film 2 is formed on the surface portion of a P-type semiconductor substrate 1, and after a gate insulation film 3 is formed on the surface of the region of the semiconductor substrate 1 in which region an active device is to be formed, a first polycrystalline silicon layer 4 is formed and selectively removed. Then, with the silicon layer 4 and others as a mask, an N-type impurity 5 is ion- implanted into the surface portion of the semiconductor substrate 1, an insulating film 6 made of SiO2 is formed on the semiconductor substrate 1, and the insulating film 6 is selectively removed by photoetching. Next, a second polycrystalline silicon layer 8 constituting a load resistance is formed on the surface of the semiconductor substrate 1. Thereafter, the portion of the semiconductor substrate 1 into which the impurity was ion-implanted is activated by annealing treatment, thereby forming an N<+> type semiconductor region 9. With this, generation of a natural oxide film can be prevented, and generation of contact failure can be prevented as well. |
