| 摘要 |
PURPOSE:To form a single crystal silicon film with good reproducibility by forming plural belt type grooves on the surface of a substrate covered with an insulator film, then by depositing a polycrystalline silicon film on the surface of the substrate, and by recrystallizing by heating with the irradiation of an optical energy beam. CONSTITUTION:Plural belt type grooves wherein the bottom surface 3 of the groove and the surface of a substrate 1 are in parallel and a smaller angle thetawithin the angle made with a pair of side walls 4 facing each other and the bottom surface 3 is nearly 54.7 deg. are formed at a definite interval on the surface of the insulator film 2 on the substrate 1. Then, a polycrystalline silicon film 5 is deposited on the surface of the substrate and recrystallized by heating to obtain the coexistence of a solid phase and a liquid phase with a laser beam as an optical energy beam. In this case, a minute crystal particle of orientation <100> of the vertical direction of the substrate is selectively grown in the heated silicon film. This enables to form a single crystal silicon film of great particle size and orientation <100> of the vertical direction of the substrate and orientation <110> of the longitudinal direction of the groove in good reproducibility. |
