| 摘要 |
PURPOSE:To make possible the automation of pattern matching and to improve dimensional accuracy and working efficiency by making user of a large difference in the reflectivity at a specific wavelength. CONSTITUTION:A matching pattern is formed by forming a Cr film 2 on a substrate 3 and forming an Al film 1 atop the same to the shape like a cruciform mark. A resist 4 is further formed thereon. The pattern recognition is executed from the reflectivities of the Al film surface 1a and the Cr film surface 2a in order to detect the center of the cruciform pattern consisting of the Al film 1. The automatic pattern matching of the thin metallic films with which the automation of the pattern matching is difficult to each other owing to the approximate reflectivities is made possible and the working of the fine pattern is possible if an objective mirror light source for detecting the pattern and a sensor for reflected light which are usable for, for example, 2.0mum are used in this stage. |
