发明名称 DRIVING CIRCUIT FOR FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To reduce the loss of a MOSFET in its ON state and to speed up its OFF operation by connecting the series circuit formed by connecting the output sides of the 1st and the 2nd photocouplers in series to the series circuit of the output sides of the 3rd and the 4th photocouplers in parallel, and operating the 1st and the 4th photocouplers or the 2nd and the 3rd photocouplers selectively. CONSTITUTION:The 3rd series circuit of the input terminal 31b of the 1st photocoupler 31 and the input terminal 34b of the 4th photocoupler 34 and the 4th series circuit of the input terminal 32b of the 2nd photocoupler 32 and the input terminal 33 of the 3rd photocoupler 33 are connected in parallel to both terminals of a switching circuit 51 through a current limiting resistance r5. In this circuit constitution, the switch SW1 of the switching circuit 51 is changed over to turn on the 1st and the 4th photocouplers 31 and 34, and then a positive voltage V1 is applied between the gate G and source S of the MOSFET 1.
申请公布号 JPS61239717(A) 申请公布日期 1986.10.25
申请号 JP19850080702 申请日期 1985.04.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIZAWA YUJI
分类号 H03K17/04;H03K17/687 主分类号 H03K17/04
代理机构 代理人
主权项
地址