| 摘要 |
PURPOSE:To facilitate controlling the focusing of the ion beam by using the first deflector, which consists of elements for deflecting the beam to opposite directions, to irradiate the beam upon a drawing material and by using the second deflector to vary the incidence position of the beam. CONSTITUTION:The beam discharged from an ion source 11 and containing impurity ions is focused and poured on a drawing material 14 such as a silicon wafer. In order to prevent the impurity ions from penetrating deep into the material 14, a first deflector 18 consisting of electrostatic deflecting plates 20 and 21 to which opposite voltages are applied from a deflection power supply 22 is used to make the beam to be obliquely (for example, 7 deg.C slant from the axis) irradiated upon the material 14. The incidence position of the beam is varied by feeding deflecting signals for the figure of a picture to be drawn from a deflecting circuit 23 to a second deflector 19. Accordingly, it is possible to easily focus the beam and to prevent any blur of the beam which might result from dispersion of the ionic energy.
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