| 摘要 |
PURPOSE:To prevent barrier metal layers in a Schottky barrier type semiconductor device from leaving off, by providing a semiconductor film between an insulation film and the barrier metal. CONSTITUTION:After a predetermined thickness of Cr-Ni-Au for example is formed on the bottom surface of an N<+> type semiconductor substrate 1, it is heat treated and a wire 10 is bonded to an Al film 7. This heat treatment of the bottom-face electrode provides a silicide layer 6a between an N-type epitaxial layer 2 and a molybdenum film 5, and a silicide layer 6b between Mo-Al field plates 5 and 7. The silicide layer 6a, which determines a barrier height of a Schottky barrier type diode, has a high adhesivity to molybdenum and silicon. The silicide layer 6a as well as the silicide layer 6b is formed by the thermal reaction between silicon and a barrier metal. Accordingly, the Mo-Al films 5 and 7 can be effectively prevented from peeling off. |
