| 摘要 |
PURPOSE:To obtain a thick metal plating pattern with low defect density by using a material having small sputtering rate for the base metal film, thereby reducing the adherence of the film to an intermediate layer side wall by sputtering. CONSTITUTION:A thin titanium film 2 is formed on a semiconductor substrate 1. Then, a thick organic layer 3 is formed as an intermediate layer, a silicon resist 4 is coated, exposed, and developed. With the resist pattern as a mask O2 gas is used, the film 3 of the intermediate layer is etched by reactive ion etching to expose the film 2. Since the titanium has small sputtering rate, the sputter by O2 gas can be alleviated. With the film 2 as an electrode and with the pattern of the film 3 as a mask Au 5 is electrically selectively plated. The pattern of the film 3 is eventually removed by plasma etching. |
