| 摘要 |
PURPOSE:To obtain a thin-film transistor without disconnection due to steps, by forming a gate electrode on the same plane with an anode oxidation film. CONSTITUTION:A gate metal 2, an insulation film 3 and a semiconductor film 4 are sequentially deposited on an insulating substrate 1, and the top is covered with a layer of photoresist 5, which is then patterned into a shape of a gate electrode. The semiconductor and insulation films are removed by etching except their portions not covered with the patterned photoresist 5, and anode oxidation is performed with the use of the gate metal 2 as an anode. An oxide film 6 is formed on the same plane with the gate electrode 2, while the thickness of the oxide film can be easily controlled by a voltage applied thereto. Accordingly, there is produced no steps around the gate electrode and therefore there occurs no disconnection. A semiconductor film 7 for ohmic contact and a metal 8 for source/drain electrodes are deposited thereon. |
