| 摘要 |
PURPOSE:To reduce the temperature distribution over a substrate by a method wherein, when a semiconductor substrate to be grown is bonded on a metallic susceptor to form a growing layer by molecular beam epitaxial process etc., the susceptor and the substrate are bonded to each other with In-Al alloy-made solder simultaneously fixing the substrate to clamping means on the peripheral part of susceptor. CONSTITUTION:When a substrate 2 to be grown is bonded on an Mo made susceptor 1 while a specified growing layer is deposited on the substrate 2 by molecular beam epitaxial process etc., the susceptor 1 and the substrate 2 are bonded to each other with In-Al alloy-made solder 3. Besides, holes 4 with three positioned tapers are made in the part encircling the substrate 2 of susceptor 1 while tapered Mo-made pins 5 with expanded pawls 8 are inserted into the surface of holes 4 while fall down preventing Mo made wires 7 are inserted into small holes made in the bottom to fix the pins 5. Moreover six rods 9 are fixed to the part protruding from the backside of susceptor 1 to position the susceptor 1 in the vacuum. Through these procedures, any void can be eliminated from the solder. |
