| 发明名称 |
DEVICES INCLUDING A LAYER OF AMORPHOUS SILICON |
| 摘要 |
<p>An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine.</p> |
| 申请公布号 |
HK77186(A) |
申请公布日期 |
1986.10.24 |
| 申请号 |
HK19860000771 |
申请日期 |
1986.10.16 |
| 申请人 |
RCA CORPORATION |
发明人 |
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| 分类号 |
H01L31/04;C23C16/505;H01J29/45;H01L21/205;H01L21/28;H01L29/04;H01L29/167;H01L29/47;H01L29/872;H01L31/07;H01L31/10;H01L31/18;H01L31/20;(IPC1-7):H01L29/04;H01L29/16 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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