| 摘要 |
PURPOSE:To obtain the excellent semiconductor crystal having stabilized characteristics with a high yield rate by a met hod wherein the melt region divided by a partition is properly separated as a non-melt region, and the surface of a semiconductor substrate is once exposed to an atmosphere, thereby enabling to prevent the mixing of heterogenous melt between each melt region. CONSTITUTION:A melt region 3 and a non-melt region 5 are alternately located on a slider 4 in the direction as shown by the arrow in the diagram. When a semiconductor 1 passes the non-melt region 5, the surface of the substrate is exposed to an atmosphere. As a result, the melt thin film 6 located on the surface of the substrate 1, which is not removed by the microscopic gap located between a partition 2 and the substrate 1, is contracted into drop form 7 by the surface tension, and the melt thin film 6 is removed in the next partition 2. |
