| 摘要 |
PURPOSE:To obtain a liquid metal ion source enable of stable take-out of at least two type ions of B ion, P ion and As ion for long term by employing such ionizing material as having the composition formula PtX where X is composed of at least two elements selected from the group of As, B and P while specifying the atomic %. CONSTITUTION:In a liquid metal ion source, (a) and (b) will show the atomic % while X is composed of at least two elements selected from the group of As, B and P and such alloy as shown by the composition formula Pt, X where 30<b<60, and a+b=100 is employed as the ionizing material. Consequently, a liquid metal ion source enable of efficient and stable take-out of at least two type ions of P-type impurities or boron and N-type impurities or phosphorous and arsenic for silicon semiconductor for long term can be obtained. |
