MAGNETIC FIELD SENSING DEVICE

摘要

A magnetic field sensing device employs a magnetoresistive element which exhibits a negative DELTA rho effect ( DELTA rho = rho ||- rho ORTHOGONAL ) when a magnetic field is applied to it to magnetise it to saturation at room temperature. The electrical resistivity rho ORTHOGONAL of the element in a direction perpendicular to the direction of current through the element is greater than the electrical resistivity rho || of the element in a direction parallel to the direction of the electrical current through the element. The magnetoresistive element is formed from a ferromagnetic material containing at least one of Ni; Fe and Co together with Ir in an amount sufficient to cause the element to exhibit negative anisotropic magnetoresistance at room temperature.