| 摘要 |
<p>A monolithic, integrated lateral thyristor whose parasitic barrier layer capacity (Dp) and whose parasitic substrate transistor (Tp) are compensated for by simple structural measures. In the transistor's emitter regions (T1) n+ doping is applied, so that an inverse transistor (T3) is produced, which draws off the minority carrier current from the parasitic transistor (Tp). The capacity diode (Cd) is rendered ineffective by a bleeder resistor (R). Through these measures it is possible, even when there is a rapid increase of voltage on the anode (A), to prevent unintentional igniting of the thyristor.</p> |
