发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To improve the characteristics of a film, the speed of formation of the film and the reproducibility and to make the quality of the film uniform by a method wherein a compound containing silicon and halogen and an activation seed produced from a compound containing oxygen are introduced into a film-forming space and an optical energy is applied thereto. CONSTITUTION:Gas supply sources 106-109 are provided in accordance with a compound containing oxygen and the number of hydrogen, a halogen compound, an inactive gas, a compound containing silicon, a compound containing carbon, a germanium compound, a compound containing an impurity element as a constituent, etc. which are used as occasion calls. A material gas for producing an activation seed, which is supplied from a gas inlet pipe 110, is activated in an activating chamber, and the activation seed produced therein is introduced into a film-forming chamber 101 through an inlet pipe 124. A light 118 directed to a desired part from an optical energy generating unit 117 is applied to a compound containing silicon and halogen and the activation seed which flow in the direction of an arrow 119, and thereby an oxygen-containing amorphous deposited film is formed on the whole or a desired part of a substrate 103.
申请公布号 JPS61237419(A) 申请公布日期 1986.10.22
申请号 JP19850078780 申请日期 1985.04.12
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;KANAI MASAHIRO;ONUKI YUKIHIKO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/30;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/30
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