| 摘要 |
PURPOSE:To heat a semiconductor substrate up to high temperature with excellent thermal efficiency subject to even temperature distribution by a method wherein a coating film with energy absorption factor higher than that of substrate material is heated by thermal radiation as well as thermal conduction from the coating film itself. CONSTITUTION:A quartz glass sheet 5 with rough surface whereto a tungsten film 4 is evaporated adheres closely to the backside of a substrate with the tungsten film 4 side turned downward to be heated by conduction heaters 2. Most of the thermal radiation energy generated by the heaters 2 to irradiate the tungsten film 4 may be abosrbed into the film 4 due to the roughness of glass surface whereto the film 4 closely adheres. Besides, the backwise of quartz glass sheet 5 transmits thermal energy to the silicon substrate 1 while maintaining spacially even temperature due to the high thermal conductivity of tungsten film 4. Therefore, the silicon substrate 1 may be heated up to high temperature while restricting the temperature unevenness down to several % of less since the silicon substrate 1 is supplied with specially even thermal energy from the backside thereof. |
