| 摘要 |
PURPOSE:To improve the photoelectric conversion efficiency of a GaAs solar cell by forming a first intermediate layer consisting of a P-type GaAs layer and a second intermediate layer composed of AlyGa1-yAs (0<=g<=0.4) in high carrier concentration onto an Si substrate. CONSTITUTION:A first intermediate layer 11 consisting of a P-type GaAs layer in film thickness of 40-1,000Angstrom , a second intermediate layer 12 composed of P-type AlyGa1-yAs (0<=y<=0.4) with a carrier concentration of 1X10<18>-5X10<19>cm<-3> shaped onto the first intermediate layer 11, a P-type GaAs layer 13, an N-type GaAs layer 14 and a window layer 15 consisting of N-type AlzGa1-zAs (where 0.6<=z<=0.95) are formed onto a P-type Si single crystal substrate 1 in succession, thus shaping a hetero-face structure GaAs solar cell composed of a P-N junction 2 of GaAs. According to said constitution, disloca tion density in the upper GaAs layers 13, 14 can be inhibited to 10<5>cm<-2> or less, and the recombination loss of optically induced carriers on an interface section with the first intermediate layer 11 or the Si substrate can be suppressed, thus improving photoelectric conversion efficiency. |
