Dry development process for metal lift-off profile.

摘要

A process for the development of photoresist which uses no wet developing step is disclosed. An exposed photoresist layer is initially treated with an organosilicon compound such that silicon atoms bound to the exposed photoresist resulting in different etch resistance in the exposed and unexposed areas. Following such treatment, the photoresist layer is selectively etched to define a mask image in the photoresist layer. Conventional processing steps can be used in conjunction with this novel process to fabricate metallic conductor structures using additive or subtractive processes.