| 摘要 |
PURPOSE:To enable irradiation of different type of ions onto same point under same conditions by providing plural ion sources of different type and switching them. CONSTITUTION:Assuming phosphorus and arsenic are implanted into same point on a wafer 1 to form a double drain structure, phosphorous ion beam projected from first ion source 11 is irradiated through mass spectrometer 15 onto the wafer 1 thus to implant the phosphorous ions 18 into specific portion 17 not applied with masking 16. Then arsenic ion beam is projected from second ion source 12 and deflected through a deflector 14 from where it is led to the mass spectrometer 15 and irradiated onto the wafer 1 thus to implant the arsenic ions 19 to the portion having no masking 16. Since the direction of ion beam apparatus 10 is maintained constant, the phosphorous and the arsenic are implanted into same point under same conditions.
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