| 摘要 |
PURPOSE:To enable a normally-on type while reducing power consumption and improving the degree of integration by forming a region, into which a P-type impurity is added, into a gallium-arsenic semiconductor layer. CONSTITUTION:A gallium-arsenic semiconductor layer 2, to which a substance such as beryllium is added in a concentration such as approximately 10<18>cm<-3> as a P-type impurity, is grown on a substrate 1 to a thickness such as approximately 0.4mum, and an aluminum-gallium-arsenic semiconductor layer 3 to which an impurity is added is grown to a thickness such as approximately 400Angstrom . A gate electrode 4 is formed onto the layer 3, and a source electrode 5 and a drain electrode 6 are shaped. In such a field-effect transistor, two-dimensional electrons 7 are formed in a channel between the source electrode 5 and the drain electrode 6, thus bearing amplification action.
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