发明名称 Semiconductor device.
摘要 A semiconductor device (1) having a multilayer package, provided with signal lines (212, 213, 121, 111; 213 min ) which connect a chip (7) provided at a top portion of a package with external terminals (211, 311) provided at a bottom portion of the package. The signal lines have portions (212, 213 min ) formed along side surfaces of the package. Ground surfaces (442, 452) are formed at predetermined distances on two sides of the high-speed signal lines (212, 213 min ). Coplanar waveguides are formed by the high-speed signal lines and the ground surfaces, so the impedance of vertical portions (212, 213 min ) of the high-speed signal lines is matched to the circuits connected thereto.
申请公布号 EP0198621(A2) 申请公布日期 1986.10.22
申请号 EP19860302305 申请日期 1986.03.27
申请人 FUJITSU LIMITED 发明人 MIYAUCHI, AKIRA;NISHIMOTO, HIROSHI;OKIYAMA, TADASHI;KITASAGAMI, HIROO;SUGIMOTO, MASAHIRO;TAMADA, HARUO;EMORI, SHINJI
分类号 H01L23/057;H01L23/48;H01L23/498;H01L23/66;H05K1/02;H05K1/18;H05K3/32;H05K3/34 主分类号 H01L23/057
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