发明名称 |
Thin film forming method through sputtering and sputtering device. |
摘要 |
<p>A method for forming a thin film wherein plural targets of different materials are alternately sputtered through the switching of the electric powers supplied thereto, the particles produced from the sputtering are ionized and thereafter deposited on a substrate. This method provides an alloy thin film, compound thin film or multi-layer thin film of any composition and enhances adhesion among the particles. A sputtering device for practicing this method is also disclosed.</p> |
申请公布号 |
EP0198459(A2) |
申请公布日期 |
1986.10.22 |
申请号 |
EP19860105081 |
申请日期 |
1986.04.14 |
申请人 |
HITACHI, LTD. |
发明人 |
NIHEI, MASAYASU;SUWA, MASATERU;CHIGASAKI, MITSUO |
分类号 |
C23C14/34;C23C14/32;C23C14/35;C23C14/54;H01J37/34;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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