发明名称 Thin film forming method through sputtering and sputtering device.
摘要 <p>A method for forming a thin film wherein plural targets of different materials are alternately sputtered through the switching of the electric powers supplied thereto, the particles produced from the sputtering are ionized and thereafter deposited on a substrate. This method provides an alloy thin film, compound thin film or multi-layer thin film of any composition and enhances adhesion among the particles. A sputtering device for practicing this method is also disclosed.</p>
申请公布号 EP0198459(A2) 申请公布日期 1986.10.22
申请号 EP19860105081 申请日期 1986.04.14
申请人 HITACHI, LTD. 发明人 NIHEI, MASAYASU;SUWA, MASATERU;CHIGASAKI, MITSUO
分类号 C23C14/34;C23C14/32;C23C14/35;C23C14/54;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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