发明名称 Monolithic integrated circuits having protection against latch-up.
摘要 <p>It is well known that in certain structures of monolithic integrated circuitry, parasitic thyristor action (via 18-10-11-13) can lead to latch-up and subsequent destruction of the circuit. This specification discloses a totally isolated diode (40) in series with a supply terminal to the circuit: in normal operation such a diode (40) would be forward biased, but under the conditions required for latch-up, it becomes reverse biased, preventing the current flow that would otherwise allow the thyristor to turn on.</p>
申请公布号 EP0198569(A1) 申请公布日期 1986.10.22
申请号 EP19860300246 申请日期 1986.01.15
申请人 SILICONIX LIMITED 发明人 DAVIES, STEPHEN;DAVIES, KEITH
分类号 H01L27/08;H01L27/06;H01L27/092;H01L29/78;H01L29/861;(IPC1-7):H01L27/08 主分类号 H01L27/08
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