发明名称 |
Monolithic integrated circuits having protection against latch-up. |
摘要 |
<p>It is well known that in certain structures of monolithic integrated circuitry, parasitic thyristor action (via 18-10-11-13) can lead to latch-up and subsequent destruction of the circuit. This specification discloses a totally isolated diode (40) in series with a supply terminal to the circuit: in normal operation such a diode (40) would be forward biased, but under the conditions required for latch-up, it becomes reverse biased, preventing the current flow that would otherwise allow the thyristor to turn on.</p> |
申请公布号 |
EP0198569(A1) |
申请公布日期 |
1986.10.22 |
申请号 |
EP19860300246 |
申请日期 |
1986.01.15 |
申请人 |
SILICONIX LIMITED |
发明人 |
DAVIES, STEPHEN;DAVIES, KEITH |
分类号 |
H01L27/08;H01L27/06;H01L27/092;H01L29/78;H01L29/861;(IPC1-7):H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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