| 摘要 |
A single longitudinal mode semiconductor laser is fabricated as a composite structure using the plane orientation dependency of the growth rate to grow epitaxial layers which are separate on both sides of a step having a slant crystal face, thus forming a first level and a second level higher than the first level, the step defining the transition between the first and second levels, which transistion is in the propagation direction of the laser radiation. A first semiconductor layer having a periodic structure and forming a waveguide layer extending over the second level. A second semiconductor layer separated at the step has a first portion extending over the first semiconductor layer and a second portion over the first level. A semiconductor active layer also separated at the step extends over both portions of the second semiconductor layer such that an end of the semiconductor active layer abuts an end of the waveguide layer at the step.
|
