发明名称 MANUFACTURE OF MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To attain flat pattern by forming a film with negative photo sensing material (photosensitive layer) on a substrate, irradiating the rays of light from the rear side of the substrate, applying development processing so as to reduce the step of a 'Permalloy(R)' pattern generated at the edge of a conductor pattern. CONSTITUTION:The conductor pattern 2 is formed on the bubble material substrate 1, a photosensitive polyimide 3 is coated further and the entire face of the substrate is irradiated from the rear face of the substrate by using an ultraviolet ray 4. In this case, the conductor pattern 2 shields the ultraviolet rays and the photosensitive polyimide on the conductor pattern is a nonexposed part 3'. Thus, the unexposed part is removed after development processing. The 2nd insulation film 5 is formed on the substrate after baking processing and the 'Permalloy(R)' pattern 6 is formed on the 2nd insulation film 5 finally.
申请公布号 JPS61236096(A) 申请公布日期 1986.10.21
申请号 JP19850074214 申请日期 1985.04.10
申请人 HITACHI LTD 发明人 UMEZAKI HIROSHI;NAKATANI MITSUO;SHOJI FUSAJI;MATSUYAMA HARUHIKO;KOYAMA NAOKI;KATAOKA FUMIO;TAKESHITA MASATOSHI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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