发明名称 |
Method of manufacturing semiconductor device having a pressure sensor |
摘要 |
The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.
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申请公布号 |
US4618397(A) |
申请公布日期 |
1986.10.21 |
申请号 |
US19850802431 |
申请日期 |
1985.11.27 |
申请人 |
HITACHI, LTD. |
发明人 |
SHIMIZU, ISAO;YAMADA, KAZUJI |
分类号 |
G01L9/00;H01L29/84;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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