PROCESS FOR PREPARING SEMICONDUCTOR SINGLE CRYSTAL LAYER AND ELECTRON BEAM ANNEALING DEVICE

摘要

PURPOSE:To minimize thermal strain to be generated in a specimen and to prepare a single crystal layer having good quality by controlling temperature distribution in the longitudinal direction of false linear beam to make the temp. distribution flat and making the gradient of temp. distribution in the external periphery of the part exposed to the electron beam mild. CONSTITUTION:Electron beam emitted from an electron gun 31 is converged by a condenser lens 32 and an objective lens 33. A specimen 34 is exposed to the converged electron beam and the surface of the specimen is scanned with a scanning coil 35. A polarizing plate 38 is provided between the lens 32 and the scanning coil 35, and the beam is polarized at high speed in the Y direction. A high frequency voltage is impressed on the polarizing plate 38 from a high frequency source 40. If the working space is large enough, a polarizing plate 39 is provided below the polarizing coil 35 instead of the polarizing plate 38.