| 摘要 |
PURPOSE:To attain defect check of a transparent thin film pattern by lighting the transparent thin film pattern at a bright eye sight and detecting a generated interfered color. CONSTITUTION:The light from a lighting light source 11 having a broad wavelength band is made incident to an objective lens 14 via a condenser lens 12 and a half mirror 13 to irradiate a wafer 15 to be checked on an XY table 16. The reflected light of the wafer to be checked passes again through the objective lens 14 and the half mirror 13, separated into three wavelength band by dichroic mirrors 17a, 17b after the wavelengths are limited by optical filters 18a, 18b, 18c having wavelengths lambda1, lambda2, lambda3 and the image is picked up by photoelectric transducers 20a, 20b, 20c. In this case, magnification correction by a magnification correction lens is applied to prevent magnification error due to color aberration among the three patterns so that the magnification of three pictures is made equal. Output pictures 21a, 21b, 21c of three photoelectric transducers 20a, 20b, 20c are subject to operation processing by a signal processing section to detect remaining resist film.
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