| 摘要 |
There is disclosed a solid state imaging device comprising P+ regions formed in photo-electro converting element regions and the separating region defined therebetween, respectively, the P+ regions being continuous to each other and defining no step portion therebetween. There is also disclosed a method of manufacturing the imaging device, the method comprising a step of forming P+ regions in photo-electro converting element regions and the separating region defined therebetween, respectively.
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