| 摘要 |
PURPOSE:To enable to properly choose the thickness of the first interlayer insulating film at the region to need a high-withstand voltage and a low-capacity coupling and the region to need a high-frequency and high-speed operation and to enable the high-withstand voltage to consist with the high efficiency in the title device by a method wherein the device is constituted in a multilayer wiring structure, wherein the film thickness of the interlayer insulating film is formed thicker at the necessary part only according to the circuit conditions. CONSTITUTION:First-layer Al wirings 3 are formed on the surface oxide film 2 of a semiconductor substrate 1 and a polyimide resin film 4 is formed over the whole surface thereon as the first interlayer insulating film. Then, the same polyimide resin film as the above- mentioned or a photosensitive polyimide film 7 is formed on the whole surface, a part of the photosensitive polyimide film 7 is cure-treated according to a partial sensitization and is imidated and the step is formed by removing the unnecessary part according to a developing treatment. Such the photosensitive polyimide film 7 is formed at a region I only, where a high-withstand voltage level or a low-capacitive coupling is required, and the part, where the photosensitive polyimide film 7 is not formed, is actuated at low voltage or is used as a region II, where a capacity coupling is out of the question. The second-layer Al wirings are formed thereon and the multilayer wiring structure is obtained by forming the second interlayer insulating film. |
