| 摘要 |
PURPOSE:To prepare a starting material for a single crystal having high quality contg. no long and large sized impurity at low cost by feeding a raw material for a solid crystal to a single crystal melted and coagulated in a crucible uniformly along the wall of the crucible to the melt. CONSTITUTION:In a stage for growing a single crystal from a melted raw material (e.g. Mn-Zn ferrite), a feeding pipe 9 is attached to a heating furnace 1 in such condition that the part at the top of the furnace (i.e. the top end part of the pipe) is held at <=1,000 deg.C. The fed raw material comprising solid crystal collides in the first stage with a raw material transmitting tool 11, then collides with the internal wall of the crucible 2. After repeating the procedure, the raw material falls uniformly on the surface of the melt 4, the solid crystal material is melted. Since the raw material transmitting tool 12 is revolved by a revolving mechanism for a revolving shaft 14, melted raw material reaches the internal wall of the crucible 2 by the centrifugal force. Therefore, the raw material is supplied uniformly to the molten material from the internal wall of the crucible 2 toward peripheral direction.
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